Applied Physics of Carbon Nanotubes: Fundamentals of Theory, by Slava V. Rotkin, Shekhar Subramoney

By Slava V. Rotkin, Shekhar Subramoney

The booklet describes the state of the art in basic, utilized and equipment physics of nanotubes, together with fabrication, manipulation and characterization for equipment purposes; optics of nanotubes; shipping and electromechanical units and basics of idea for purposes. this knowledge is necessary to the sector of nanoscience on account that nanotubes have the aptitude to turn into a really major digital fabric for many years to return. The publication will profit all all readers attracted to the appliance of nanotubes, both of their theoretical foundations or in newly built characterization instruments that can allow sensible equipment fabrication.

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Extra info for Applied Physics of Carbon Nanotubes: Fundamentals of Theory, Optics and Transport Devices

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The thick solid line is a solution of joint Poisson and Boltzmann equations. The dashed line is the result of the analytical approximation (see Color Plates, p. 339) screening properties of the surrounding matrix and/or the substrate (via an effective dielectric function, ε). 3 Results and Discussion Green’s functions have been derived for several realistic device geometries and the self–consistent charge densities have been calculated, using the statistical approach, detailed in [23, 34]. These charge densities were compared with the results of the quantum mechanical computation.

10). The lower resistance can be expected in the case of entirely nanotube circuit [53]. The quantum contact resistance will not limit anymore the ON current in this case. That device can fully exploit all advantages of the METFET. 1 Theory of Nanotube Devices 33 transform of the external potential and, thus, has not been observed before. The gap is linear in the applied gate potential (see Inset in Fig. 10). There is no upper limit for the magnitude of the opened gap in this case, except for a natural condition that the external field must not cause an electric breakdown.

2 eV from top to bottom) is presented (see Color Plates, p. 2 eV (from top to bottom). For other families at lower temperatures T =77 K and 4 K this effect is even sharper. 5 Results and Discussion Next we discuss the OFF/ON ratio of our proposed METFET and show that the theoretical limit for a specific design of SWNT METFET’s can be as small as 10−6 . 11 shows the room temperature (300 K) ballistic current through a METFET as a function of the gap, Eg (which is proportional to the gate voltage).

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